| PART |
Description |
Maker |
| TPCP8F01 |
TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
| ISD1720 |
Multi-Message Single-Chip Voice Record & Playback Device
|
Winbond
|
| TH50VPN564 TH50VPN5640EBSB |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS PSEUDO SRAM AND NAND E2PROM MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA
|
| TPCP8H02 |
TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
| TPCP8H01 |
TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
| SSM6G18NU |
Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (P-ch SBD)
|
Toshiba Semiconductor
|
| MF3128-MLDAP01 MF3256-MLDAP01 MF3512-MLDAP01 |
128K X 8 MULTI DEVICE SRAM CARD, 200 ns, XMA60
256K X 8 MULTI DEVICE SRAM CARD, 200 ns, XMA60
512K X 8 MULTI DEVICE SRAM CARD, 200 ns, XMA60
|
|
| OP954 |
PIN Sili con Pho todiode
|
OPTEK Technologies
ETC
Optek Technology
|
| WED2ZL361MSJ-BC WED2ZL361MSJ26BI WED2ZL361MSJ42BC |
NBL SSRAM MCP
1M X 36 MULTI DEVICE SRAM MODULE, 2.6 ns, PBGA119
1M X 36 MULTI DEVICE SRAM MODULE, 4.2 ns, PBGA119
|
WHITE ELECTRONIC DESIGNS CORP
|
| MT2LSYT3272B2G-12L MT4LSYT6472B2G-12L |
32K X 72 MULTI DEVICE SRAM MODULE, 12 ns, DMA160
64K X 72 MULTI DEVICE SRAM MODULE, 12 ns, DMA160
|
RECOM Electronic GmbH
|
| SYS32512ZK-010 SYS32512ZK-012 SYS32512ZK-015 SYS32 |
512 K x 32 Static RAM
512K X 32 MULTI DEVICE SRAM MODULE, 12 ns, PZMA72 PLASTIC, ZIP-72
512K X 32 MULTI DEVICE SRAM MODULE, 10 ns, PZMA72 PLASTIC, ZIP-72
512K X 32 MULTI DEVICE SRAM MODULE, 12 ns, PSMA72 PLASTIC, SIMM-72
512K X 32 MULTI DEVICE SRAM MODULE, 10 ns, PSMA72 PLASTIC, SIMM-72
512 K x 32 Static RAM 512亩32静态RAM
|
Amphenol, Corp.
MOSAIC
http://
Fujitsu, Ltd.
NXP Semiconductors N.V.
|
